PART |
Description |
Maker |
1N4575 1N4766A 1N4767 1N4768A 1N4576 1N4767A 1N457 |
Low-level temperature-compensated zener reference diode. Max voltage 0.048 V. Low-level temperature-compensated zener reference diode. Max voltage 0.070 V. Low-level temperature-compensated zener reference diode. Max voltage 0.014 V. Low-level temperature-compensated zener reference diode. Max voltage 0.024 V. Low-level temperature-compensated zener reference diode. Max voltage 0.028 V. Low-level temperature-compensated zener reference diode. Max voltage 0.099 V. Low-level temperature-compensated zener reference diode. Max voltage 0.002 V. Low-level temperature-compensated zener reference diode. Max voltage 0.005 V. Low-level temperature-compensated zener reference diode. Max voltage 0.003 V.
|
Motorola
|
1N828-1-1 1N822-2 1N829ATR 1N829ATR-1 1N829ATR-1-1 |
6.2 & 6.55 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES 6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated 6.2 V, SILICON, VOLTAGE REFERENCE DIODE, DO-204AA 0TC Reference Voltage Zener 6.2 & 6.55 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES 6.2 V, SILICON, VOLTAGE REFERENCE DIODE, DO-204AH 6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated
|
MICROSEMI[Microsemi Corporation] Microsemi, Corp.
|
MPXV6115VC6U |
High Temperature Accuracy Integrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated From old datasheet system
|
Motorola
|
MPXM2202 MPXM2202A MPXM2202AS MPXM2202AST1 MPXM220 |
200kPa On-Chip Temperature Compensated & Calibrated Silicon Pressure Sensors(200kPa片内温度补偿和校准硅压力传感 200 KPA ON CHIP TEMPERATURE COMPENSATED & CALIBRATED SILICON PRESSURE SENSORS
|
Motorola, Inc. 飞思卡尔半导体(中国)有限公司 MOTOROLA[Motorola, Inc]
|
2SC396404 |
Switching Applications Solenoid Drive Applications Temperature Compensated for Audio Amplifier Output Stage 2 A, 40 V, NPN, Si, POWER TRANSISTOR Switching Applications Solenoid Drive Applications Temperature Compensated for Audio Amplifier Output Stage
|
Toshiba Semiconductor
|
TPT-13-6036 TPT-13-6026 |
Temperature Compensated Power Amplifier 6 GHz - 13 GHz
|
TELEDYNE[Teledyne Technologies Incorporated]
|
CPT-13-6027 |
Temperature Compensated Power Amplifier 6 GHz - 13 GHz
|
Teledyne Technologies Incorporated
|
TPT-18-6019 TPT-18-6018 |
Temperature Compensated Power Amplifier 6 GHz - 18 GHz
|
TELEDYNE[Teledyne Technologies Incorporated]
|
MPX2202GP MPX2202ASX MPX2202D MPX2202DP MPX2202AP |
200kPa On-Chip Temperature Compensated & Calibrated Silicon Pressure Sensors(200kPa片内温度补偿和校准硅压力传感 200kPa On-Chip Temperature Compensated & Calibrated Silicon Pressure Sensors(200kPa???娓╁害琛ュ??????????浼????
|
飞思卡尔半导体(中国)有限公司 椋???″????浣?涓??)??????
|
1N4570 1N4578 1N4578A 1N4580 1N4580A |
6.4 VOLT TEMPERATURE COMPENSATED 6.4 VOLT TEMPERATURE COMPENSATED
|
Digitron Semiconductors
|
ECS-500X ECS-500X-144-B |
TEMPERATURE COMPENSATED OSCILLATOR
|
ECS, Inc.
|
MPXV4006G |
MPXV4006G Integrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated From old datasheet system Integrated Silicon Pressure Sensor On-Chip Signal Conditioned,Temperature Compensated and Calibrated
|
Motorola
|